for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information general description the 0912GN-650V is an internally matched, common source, class ab gan on sic hemt transistor capable of providing over 17db gain, 650 watts of pulsed rf output power at 128 s pulse width, 10% duty factor across the 960 to 1215 mhz band. the transistor has internal pre- match for optimal performance. this hermetically sealed transistor can be used for broadband avionics data li nk applications. it utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. case outline 55-kr common source absolute maximum ratings maximum power dissipation device dissipation @ 25 ? c 1400 w maximum voltage and current drain-source voltage (v dss ) 150 v gate-source voltage (v gs ) -8 to +0 v maximum temperatures storage temperature (t stg ) -55 to +125 ? c operating junction temperature +250 ? c electrical characteristics @ 25 ? c symbol characteristics test conditions min typ max units pout output power freq=960, 1090, 1215 mhz 650 w gp power gain pout=650w, freq=960, 1090, 1215 mhz 17 18 db ? d drain efficiency pout=650 w, freq=960, 1090, 1215 mhz 48 53 % dr droop pout=650w, freq=960, 1090, 1215 mhz 0.8 db vswr-t load mismatch tolerance pout=650w, freq= 1215mhz 3:1 ? jc thermal resistance pulse wi dth=128us, duty=10% 0.155 c/w ? bias condition: vdd=+50v, idq=100ma average curre nt (vgs= -2.0 ~ -4.5v ) with constant gate bias functional characteristics @ 25 ? c i d(off) drain leakage current v gs = -8v, v d = 150v 64 ma i g(off) gate leakage current v gs = -8v, v d = 0v 22 ma bv dss drain-source breakdown voltage v gs =-8v, i d = 64ma 150 v issue june 2013 export classification: ear-99 0912GN-650V 650 watts - 50 volts, 128 ? s, 10% broad band data link 960 - 1215 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information typical broad band performace data frequency pin (w) pout (w) id (a) rl (db) eff (%) g (db) droop (db) 960 mhz 11.2 684 2.56 -7 53 17.9 0.3 1090 mhz 11.2 684 2.29 -7 60 17.9 0.3 1215 mhz 11.2 721 2.29 -14 63 18.1 0.4 0912GN-650V 650 watts - 50 volts, 128 ? s, 10% broad band data link 960 - 1215 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information 55-kr package dimension dimension min (mil) min (mm) max (mil) max (mm) a 370 9.40 372 9.44 b 498 12.65 500 12.7 c 700 17.78 702 17.83 d 830 21.08 832 21.13 e 1030 26.16 1032 26.21 f 101 2.56 102 2.59 g 151 3.84 152 3.86 h 385 9.78 387 9.83 i 130 3.30 132 3.35 j 003 .076 004 0.10 k 135 3.43 137 3.48 l 105 2.67 107 2.72 m 085 2.16 86 2.18 n 065 1.65 66 1.68 0912GN-650V 650 watts - 50 volts, 128 ? s, 10% broad band data link 960 - 1215 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information the information contained in the document is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitt ed, distributed or disclosed or used without the express duly signed written cons ent of microsemi if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein may not be modifi ed, by any person other than authorized personnel of microsemi. no license under any patent, copy right, trade secret or other intellectual property right i s granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, es toppels or otherwise. any license under such intellectual property ri ghts must be approved by microsemi in writing signed by an office r of microsemi. microsemi reserves the right to change the configuration, func tionality and performance of its products at anytime without any notice. this product has been subject to limited testing and s hould not be used in conjunction with life-support or other missi on- critical equipment or applications. microsemi assumes no liabilit y whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particu lar purpose, merchantability, or infringement of any patent, copyright or ot her intellectual property right. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp. revision history revision level / date para. affected description 01 / june 2013 - initial preliminary release 0912GN-650V 650 watts - 50 volts, 128 ? s, 10% broad band data link 960 - 1215 mhz downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information downloaded from: http:///
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